Semiconductor device having low floating inductance

Details Semiconductor device having low floating inductance Semiconductor device having low floating inductance

1993-07-02

1995-06-13

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257689, 257691, 257692, 257693, 257734, H01L 2302, H01L 2312, H01L 2348, H01I 2944

Patent

active

054245796

ABSTRACT:
A first composite substrate including an insulating substrate, a copper pattern, and a copper layer on opposite surfaces is mounted on a metal base plate. A second composite substrate and semiconductor chips are mounted on the first composite substrate and interconnected by wire bonding. The paths of current flowing in the wires and in a copper pattern of the second composite substrate are antiparallel to the paths of current flowing in respective corresponding portions of the first composite substrate. A semiconductor device is produced in which an increasing switching frequency does not increase a surge voltage generated in ON and OFF switching operations.

REFERENCES:
patent: 4907068 (1990-03-01), Amann et al.
patent: 5027192 (1991-06-01), Kloucek
patent: 5202578 (1993-04-01), Hideshima

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