Semiconductor device having logic circuitry and memory...

Details Semiconductor device having logic circuitry and memory... Semiconductor device having logic circuitry and memory...

2007-11-27

2007-11-27

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257S314000, C257SE29309

Reexamination Certificate

active

10842424

ABSTRACT:
A semiconductor switching element and a semiconductor storage element each have a gate electrode, a pair of source/drain regions and a channel forming region. Memory function bodies having a function of storing electric charges are provided on opposite sides of the gate electrode of the semiconductor storage element. In the semiconductor storage element, an amount of current that flows from one of the source/drain regions to the other of the source/drain regions upon application of a voltage to the gate electrode is variable depending on an amount of electric charges retained in the memory function body.

REFERENCES:
patent: 5838041 (1998-11-01), Sakagami et al.
patent: 5898223 (1999-04-01), Frye et al.
patent: 5901080 (1999-05-01), Shouno
patent: 6008087 (1999-12-01), Wu
patent: 6335554 (2002-01-01), Yoshikawa
patent: 6836617 (2004-12-01), Parulski
patent: 2000-077618 (2000-03-01), None
patent: 2001-156188 (2001-06-01), None

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