Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-11-07
2011-10-25
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE31110, C257SE31113
Reexamination Certificate
active
08044397
ABSTRACT:
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.
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Maruyama Junya
Ohno Yumiko
Takayama Toru
Fahmy Wael
Fish & Richardson P.C.
Salerno Sarah
Semiconductor Energy Laboratory Co,. Ltd.
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