Semiconductor device having level shift diode

Details Semiconductor device having level shift diode Semiconductor device having level shift diode

1989-08-22

1990-10-16

Mintel, William

357 58, 357 22, 357 41, H01L 29161

Patent

active

049639480

ABSTRACT:
A semiconductor device comprises a substrate, at least one field effect transistor provided on the substrate, and at least one level shift diode provided on the substrate, where the level shift diode comprises a first layer made of a first compound semiconductor and a second layer made of a second compound semiconductor having an electron affinity smaller than that of the first compound semiconductor. The first and second layers form a heterojunction therebetween. The first and second compound semiconductors are both made of either one of n-type and i-type (or either one of p-type and i-type) semiconductors, and the first layer is used in common with the field effect transistor as a layer of the field effect transistor.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4575924 (1986-03-01), Reed et al.
patent: 4739379 (1988-04-01), Akagi et al.
Tomizawa et al., "Monte Carlo Simulation of GaAs Submicron N.sup.+ -N-N.sup.+ Diode With GaA/As Heterojunction Cathode," Electronic Letters, 9 Dec. 1982, No. 25/26, vol. 18, pp. 1067-1069.
Esaki et al., "Novel Epitaxy", IBM Technical Disclosure Bulletin, vol. 16, No. 4, Sep. 1973, p. 1231.
Dupuis et al., "Stacked Multiple-Bandgap Solar Cells Prepared by CVD Techniques", Conf., 14th IEEE Photovoltaic Specialists Conf. 1980, (7-15 Jan. 1980), pp. 1388-1390.
Konagai et al., "Graded-Band-Gap pGa.sub.1-x Al.sub.x As-NGaAs Heterojunction Solar Cells", Journal of Applied Physics, vol. 46, No. 8, Aug. 1978, 3542-6.

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