Semiconductor device having LDD structure with a recess in the s

Details Semiconductor device having LDD structure with a recess in the s Semiconductor device having LDD structure with a recess in the s

1997-10-07

1999-08-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, 257618, H01L 2976, H01L 2906

Patent

active

059329122

ABSTRACT:
To obtain a semiconductor device which prevents an increase in the resistance of a source/drain region; which operates fast and stably; and which provides a high manufacturing yield, and to obtain a method of manufacturing the semiconductor device. A recess 8 is formed on a first low impurity-concentration region 5 with the exception of the area immediately below side wall insulating material 6y, and a layer damaged as a result of formation of the side wall insulating material 6y is removed. Further, a second low impurity-concentration region 10 is formed below the recess 8.

REFERENCES:
patent: 5319231 (1994-06-01), Yamazaki et al.
patent: 5554544 (1996-09-01), Hsu
patent: 5585303 (1996-12-01), Hong et al.
patent: 5640035 (1997-06-01), Sudo et al.

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