Semiconductor device having inversion inducing gate

Details Semiconductor device having inversion inducing gate Semiconductor device having inversion inducing gate

1997-06-20

1999-04-20

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2976

Patent

active

058959491

ABSTRACT:
A semiconductor device is characterized by comprising a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a plurality of cell transistors each having a control gate formed on the semiconductor substrate through the first insulating film, a second insulating film formed on upper and side surfaces of the control gate, and a conductive film formed on at least the side surface of the control gate through the second insulating film.

REFERENCES:
patent: 5278439 (1994-01-01), Ma et al.
patent: 5554867 (1996-09-01), Ajika et al.

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