Semiconductor device having internal circuit other than initial

Details Semiconductor device having internal circuit other than initial Semiconductor device having internal circuit other than initial

1995-05-31

1998-04-28

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257560, H01L 2362

Patent

active

057448388

ABSTRACT:
Obtained is a semiconductor device which can effectively prevent a gate oxide film from deterioration or breaking caused by plasma charged particles which are accumulated in a wiring layer in plasma etching thereof, even if an antenna ratio is increased. In this semiconductor device, an impurity diffusion layer forming a resistor and a diode is interposed between a gate electrode layer of a field-effect transistor of an internal circuit other than an initial input stage circuit and a first wiring layer for transmitting a circuit signal to the gate electrode layer. Thus, plasma charged particles which are accumulated in the first wiring layer in plasma etching thereof are absorbed by the impurity diffusion layer, whereby no surge voltage is applied to the gate electrode layer which is connected with the first wiring layer. Thus, the gate oxide film which is positioned under the gate electrode layer is prevented from breaking or deterioration.

REFERENCES:
patent: 5270565 (1993-12-01), Lee et al.
patent: 5483093 (1996-01-01), Murakami
patent: 5567968 (1996-10-01), Tsurita et al.
Duvvury et al, "Input Protection Design for Overall Chip Reliability", EOS/ESD Symposium Proceedings, 1989, pp. 190-197.

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