Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-11-08
2005-11-08
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S597000, C438S618000, C438S675000
Reexamination Certificate
active
06962863
ABSTRACT:
The semiconductor device comprises an interconnection layer14formed on a substrate10, a cap insulation film22formed on the upper surface of the interconnection layer14, and a sidewall insulation film which is formed on the side walls of the interconnection layer14and the cap insulation film22and which includes a larger layer number of insulation films24, 26 28covering the side wall of the interconnection layer14at the side wall of the cap insulation film22than a layer number of insulation films24, 26at the side wall of the cap insulation film22. Accordingly, the sidewall insulation film can be thickened at the side wall of the interconnection layer14, whereby a parasitic capacitance between the interconnection layer14and the electrodes32adjacent to the interconnection layer14through the sidewall insulation film can be low.
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Estrada Michelle
Fujitsu Limited
Westerman Hattori Daniels & Adrian LLP
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