Semiconductor device having inter-layers with stress levels...

Details Semiconductor device having inter-layers with stress levels... Semiconductor device having inter-layers with stress levels...

2006-05-10

2010-06-15

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000, C257S369000, C257SE27062

Reexamination Certificate

active

07737495

ABSTRACT:
The present invention provides a semiconductor device including an N channel MIS type transistor and a P channel MIS type transistor. The semiconductor device includes a first inter-layer film formed on the NMIS transistor and having a tensile stress, and a second inter-layer film formed on the first inter-layer film and a PMIS transistor and having a compressive stress, and the compressive stress in the second inter-layer film is relaxed on the upper side of the first inter-layer film.

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patent: WO02/43151 (2002-05-01), None

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