Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-04
2000-12-19
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257315, 257406, 257410, H01L 29792, H01L 2976, H01L 29788
Patent
active
061630500
ABSTRACT:
In a silicon substrate, impurity diffusion layers, serving as source and drain regions, are formed to be separated from each other. A gate insulation film is formed on the silicon substrate between these source and drain regions. The gate insulation film is a silicon oxide film containing Cl having concentration of more than 1.times.10.sup.18 atoms/cm.sup.3 and less than 2.times.10.sup.20 atoms/cm.sup.3, and the gate insulation film is formed on the silicon substrate by low-pressure CVD. A gate electrode, formed of a polysilicon layer, is formed on the gate insulation film. An inter-level insulation film is formed on a resultant structure. A contact hole is formed on each of the source and drain regions of the inter-level insulation film. A drain electrode is formed on the inter-level insulation film, and connected to the drain region through the contact hole. A source electrode is formed on the inter-level insulation film, and connected to the source region through the contact hole.
REFERENCES:
patent: 4007297 (1977-02-01), Robinson et al.
patent: 4621277 (1986-11-01), Ito et al.
patent: 4725560 (1988-02-01), Abernathey et al.
patent: 4810673 (1989-03-01), Freeman
patent: 5407870 (1995-04-01), Okada et al.
patent: 5464783 (1995-11-01), Kim et al.
patent: 5498577 (1996-03-01), Fulford, Jr. et al.
patent: 5506178 (1996-04-01), Suzuki et al.
C.M. Osburn et al., "Dielectric Breakdown in Silicon Dioxide Films on Silicon," J. Electrochem, Soc.: Solid-State Science and Technology, 119(5):597-603 (1972).
F. Lious et al., "Evidence of Hole Flow in Silicon Nitride for Positive Gate Voltage," IEEE Trans. of Electron Devices, 31(12):1736-1741 (1984).
Wolf, "Silicon Processing for the VLSI ERA," 1986, pp. 191-195
Funo Sakae
Hisatomi Kiyoshi
Ishihara Katsunori
Mikata Yuuichi
Kabushiki Kaisha Toshiba
Loke Steven H.
Vu Hung K.
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