Semiconductor device having input protection circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257356, N01L 2362

Patent

active

059362820

ABSTRACT:
An input protection circuit is formed on a semiconductor substrate. A double well structure is formed by an impurity diffusion region and a protective circuit region containing the input protection circuit. A first potential setting source is connected to a separation region to set a predetermined potential, and a second potential setting source is connected to the semiconductor substrate to set a potential in the semiconductor substrate such that the separation region and the semiconductor substrate are reversely biased. Whereby, the semiconductor substrate including an internal circuit element and a peripheral circuit element is electrically isolated from the double well structure.

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