Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-17
1999-08-10
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, N01L 2362
Patent
active
059362820
ABSTRACT:
An input protection circuit is formed on a semiconductor substrate. A double well structure is formed by an impurity diffusion region and a protective circuit region containing the input protection circuit. A first potential setting source is connected to a separation region to set a predetermined potential, and a second potential setting source is connected to the semiconductor substrate to set a potential in the semiconductor substrate such that the separation region and the semiconductor substrate are reversely biased. Whereby, the semiconductor substrate including an internal circuit element and a peripheral circuit element is electrically isolated from the double well structure.
REFERENCES:
patent: 3577043 (1971-05-01), Cook
patent: 3787717 (1974-01-01), Fisher et al.
patent: 4028564 (1977-06-01), Streit et al.
patent: 4430581 (1984-02-01), Mogi et al.
patent: 4491746 (1985-01-01), Koike
patent: 4688065 (1987-08-01), Kinoshita et al.
patent: 4698655 (1987-10-01), Schultz
patent: 4739437 (1988-04-01), Morgan
patent: 4757363 (1988-07-01), Bohm et al.
patent: 4791317 (1988-12-01), Winnerl et al.
patent: 4829350 (1989-05-01), Miller
patent: 4903093 (1990-02-01), Ide et al.
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 4996626 (1991-02-01), Say
patent: 5010380 (1991-04-01), Avery
patent: 5016078 (1991-05-01), Tailliet
patent: 5072271 (1991-12-01), Shimizu et al.
patent: 5212616 (1993-05-01), Dhong et al.
patent: 5212618 (1993-05-01), O'Neill et al.
patent: 5386135 (1995-01-01), Nakazato et al.
Momodomi et al., "A Circular Output Protection Device Using Bipolar Action," 25th Annual Proceedings--Reliability Physics, Apr. 1987, San Diego, California, U.S., pp. 169-173.
Patent Abstracts of Japan, vol. 18, No. 28 (P-1676), Jan. 17, 1994.
Patent Abstracts of Japan, vol. 12, No. 395 (E-671), Oct. 20, 1988.
Baba Takatsugu
Ohsawa Takashi
Kabushiki Kaisha Toshiba
Meier Stephen D.
LandOfFree
Semiconductor device having input protection circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having input protection circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having input protection circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1122474