Semiconductor device having increased electrostatic breakdown vo

Details Semiconductor device having increased electrostatic breakdown vo Semiconductor device having increased electrostatic breakdown vo

1991-02-28

1993-08-24

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257356, 257363, H01L 2910, H01L 2968, H01L 2702, H01L 2710

Patent

active

052391949

ABSTRACT:
A semiconductor substrate has a plurality of MOS transistors formed therein. Each of the transistors comprises high density diffusion regions having high impurity density and serving as source and drain, low density diffusion regions having low impurity density and extending in contact with the high density diffusion regions, respectively, a channel region formed between the low density diffusion regions, and a gate formed above the substrate and insulated from the channel region. One of the transistors has its drain connected to an input/output terminal. The low density diffusion region of the one has impurity density higher than that of the other. The channel length of the one is greater than that of the other.

REFERENCES:
patent: 4656492 (1987-04-01), Sunami et al.
patent: 4734752 (1988-03-01), Liu et al.
patent: 4918501 (1990-04-01), Komori et al.
Patent Abstracts of Japan vol. 5, No. 137 (E-72) (809) Aug. 29, 1981 & JP-A-56 71975 (Matsushita) Jun. 15, 1981.

Affiliated with

Also associated with

Rating

Semiconductor device having increased electrostatic breakdown vo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having increased electrostatic breakdown vo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having increased electrostatic breakdown vo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-831285