Semiconductor device having improved protective circuits

Details Semiconductor device having improved protective circuits Semiconductor device having improved protective circuits

1999-03-26

2000-06-27

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257362, 257363, H01L 2362

Patent

active

060810157

ABSTRACT:
In a semiconductor device, in order to protect an interior of the device, protective circuits are provided. The protective circuits include a first circuit connected between the first terminal and a negative potential line, a second circuit connected between the first terminal and a ground potential line, and a third circuit connected between the ground potential line and a second terminal. The first circuit consists of a MOS transistor having a drain connected with the first terminal, a source connected with the negative potential line, and a gate connected with the first terminal or the negative potential line. The second circuit consists of a MOS transistor having a drain connected with the first terminal, a source connected with the ground potential line, and a gate connected with the first terminal or the ground potential line. The third circuit consists of a MOS transistor having a drain connected with the second terminal, a source connected with the ground potential line, and a gate connected with the second terminal or the ground potential line.

REFERENCES:
patent: 3636385 (1972-01-01), Koepp
patent: 5670799 (1997-09-01), Croft
patent: 5811845 (1998-09-01), Isono et al.
patent: 5903420 (1999-05-01), Ham
patent: 5917220 (1999-06-01), Waggoner

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