Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-08-02
2005-08-02
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S096000, C438S097000, C438S365000, C438S369000, C438S373000, C438S480000, C438S486000, C438S514000, C438S527000, C257S052000, C257S063000, C257S064000, C257S538000
Reexamination Certificate
active
06924216
ABSTRACT:
A method of forming the active regions of field effect transistors is proposed. According to the proposed method, shallow implanting profiles for both the halo structures and the source and drain regions can be obtained by carrying out a two-step damaging and amorphizing implantation process. During a first step, the substrate is damaged during a first light ion implantation step and subsequently substantially fully amorphized during a second heavy ion implantation step.
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Feudel Thomas
Horstmann Manfred
Stephan Rolf
Advanced Micro Devices , Inc.
Lee, Jr. Granvill D.
Williams Morgan & Amerson P.C.
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