Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1994-05-25
1996-01-02
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 72, 257 75, 257291, 257607, H01L 2354, H01L 2701, H01L 29167
Patent
active
054811210
ABSTRACT:
Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film crystal-grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the crystalline silicon film crystal-grown in the direction vertical to the flow of carriers can be obtained.
REFERENCES:
patent: 3505572 (1970-04-01), Yamashita et al.
patent: 4406709 (1983-09-01), Celler et al.
patent: 4466179 (1984-08-01), Kasten
patent: 4682206 (1987-07-01), Tsuya et al.
patent: 4992846 (1991-02-01), Sakakibara et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5170244 (1992-12-01), Dohjo et al.
patent: 5177578 (1993-01-01), Kakinoki et al.
patent: 5266816 (1993-11-01), Sato et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5318919 (1994-06-01), Noguchi et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages), Appl. Phys. Lett., vol. 60, No. 2, 13 Jan. 1992, pp. 225-227.
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", pp. 635-640, Phys. Stat. Sol. (a), 95 635 (1986).
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Ferguson Jr. Gerald J.
Robinson Eric J.
Saadat Mahshid D.
Semiconductor Energy Laboratory Co,. Ltd.
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