Semiconductor device having improved contact hole structure...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S632000, C438S636000

Reexamination Certificate

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06987060

ABSTRACT:
A contact hole fabrication method for semiconductor device includes forming a dielectric layer on a semiconductor substrate, forming an antireflective layer on the dielectric layer, forming an amine source layer on the antireflective layer, forming a photoresist layer on the amine source layer, forming a first hole pattern having a T profile and afooting profile by exposing and developing the photoresist layer, forming a second hole pattern in which the profiles are changed by reflowing the photoresist layer, and forming a contact hole by selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask.

REFERENCES:
patent: 6211051 (2001-04-01), Jurgensen et al.
patent: 6214524 (2001-04-01), Mohondro
patent: 6664031 (2003-12-01), Jung et al.
patent: 6720256 (2004-04-01), Wu et al.
patent: 6759350 (2004-07-01), Tsai
patent: 10-2003-0070653 (2003-09-01), None
Korean Patent Abstracts; Method for Forming Contact Hole of Semiconductor Device; Publication No. 1020030070653 A; Publication Date Sep. 2, 2003.

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