Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-17
2006-01-17
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S632000, C438S636000
Reexamination Certificate
active
06987060
ABSTRACT:
A contact hole fabrication method for semiconductor device includes forming a dielectric layer on a semiconductor substrate, forming an antireflective layer on the dielectric layer, forming an amine source layer on the antireflective layer, forming a photoresist layer on the amine source layer, forming a first hole pattern having a T profile and afooting profile by exposing and developing the photoresist layer, forming a second hole pattern in which the profiles are changed by reflowing the photoresist layer, and forming a contact hole by selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask.
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patent: 6214524 (2001-04-01), Mohondro
patent: 6664031 (2003-12-01), Jung et al.
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patent: 10-2003-0070653 (2003-09-01), None
Korean Patent Abstracts; Method for Forming Contact Hole of Semiconductor Device; Publication No. 1020030070653 A; Publication Date Sep. 2, 2003.
DongbuAnam Semiconductor Inc.
Fortney Andrew D.
Nguyen Cuong
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