Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-15
2011-12-20
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S409000
Reexamination Certificate
active
08080846
ABSTRACT:
A semiconductor device is disclosed which improves the breakdown voltage of a planar-type junction edge terminating structure. The device includes an n-type semiconductor substrate layer common to an active section and an edge terminating section. An n-type drift region is formed selectively on the n-type semiconductor substrate layer in the active section and a p-type partition region is formed selectively on the n-type semiconductor substrate layer in the active section. A p-type base/body region is formed on the n-type drift region and the partition region. A source electrode is connected electrically to the p-type base/body region. A p-type partition region is formed in the edge terminating section between the p-type base/body region and the scribe plane of the semiconductor device such that the p-type partition region in the edge terminating section surrounds the p-type base/body region. A drain electrode is connected electrically to the n-type semiconductor substrate layer.
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Kuribayashi Hitoshi
Wakimoto Setsuko
Yoshikawa Koh
Fuji Electric & Co., Ltd.
Rossi Kimms & McDowell LLP
Vu Hung
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