Semiconductor device having high withstand capacity and...

Details Semiconductor device having high withstand capacity and... Semiconductor device having high withstand capacity and...

2007-03-13

2007-03-13

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000

Reexamination Certificate

active

10891176

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a low concentration region, an intermediate concentration region, the first electrode region, and the second electrode region. The device has a current-voltage characteristic having the first and second break points. The voltage of the first break point is equal to or smaller than that of the second break point. The device has a maximum current density when the device is applied with an electrostatic discharge surge. The current density of the first break point is smaller than the maximum current density, and the current density of the second break point is larger than the maximum current density.

REFERENCES:
patent: 6465839 (2002-10-01), Takahashi et al.
patent: 6573144 (2003-06-01), Takahashi et al.
patent: 2002/0153592 (2002-10-01), Takahashi et al.
patent: A-2002-299346 (2002-10-01), None
patent: A-2004-95761 (2004-03-01), None
patent: A-2005-340465 (2005-12-01), None

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