Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-02-25
1994-11-15
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257363, 257469, 257539, 257551, H01L 2910
Patent
active
053650999
ABSTRACT:
A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes between the drain and the gate of the semiconductor device. The diodes protect the device by clamping the device's sustaining voltage to the total avalanche voltage of the diode. The device will dissipate any excessive energy in the conduction mode rather than in the more stressful avalanche mode. In addition, the plurality of diodes will provide for a temperature compensated sustaining voltage of the semiconductor device. The plurality of diodes are formed back-to-back in polysilicon. The positive temperature coefficient of the avalanching junction of each diode pair is compensated for by the negative temperature coefficient of the forward biased junction.
REFERENCES:
patent: 4051504 (1977-09-01), Hile
patent: 4075649 (1978-02-01), Verderber
patent: 4599631 (1986-07-01), Tsuzuki
patent: 4962411 (1990-10-01), Tokura et al.
patent: 5012313 (1991-04-01), Fujihira
Yoshida et al., "Novel Gate-Protection Devices for MOSFET's", 1982, pp. 81-84.
Phipps John P.
Robb Stephen P.
Sutor Judy L.
Terry Lewis E.
Barbee Joe E.
Bowers Courtney A.
Jackson Miriam
James Andrew J.
Motorola Inc.
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