Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-11-25
2009-06-09
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S365000, C257S371000, C438S197000, C438S199000
Reexamination Certificate
active
07545001
ABSTRACT:
A semiconductor device including an isolation region located in a substrate, an NMOS device located partially over a surface of the substrate, and a PMOS device isolated from the NMOS device by the isolation region and located partially over the surface. A first one of the NMOS and PMOS devices includes one of: (1) first source/drain regions recessed within the surface; and (2) first source/drain regions extending from the surface. A second one of the NMOS and PMOS devices includes one of: (1) second source/drain regions recessed within the surface wherein the first source/drain regions extend from the surface; (2) second source/drain regions extending from the surface wherein the first source/drain regions are recessed within the surface; and (3) second source/drain regions substantially coplanar with the surface.
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Cheng Kuan Lun
Cheng Shui-Ming
Fung Ka-Hing
Sheu Yi-Ming
Cao Phat X
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company
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