Semiconductor device having high dielectric constant gate...

Details Semiconductor device having high dielectric constant gate... Semiconductor device having high dielectric constant gate...

2007-09-04

2007-09-04

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S411000, C257SE21001

Reexamination Certificate

active

11148317

ABSTRACT:
A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.

REFERENCES:
patent: 6784114 (2004-08-01), Tao et al.
patent: 6809370 (2004-10-01), Colombo et al.
patent: 2006/0094259 (2006-05-01), Gilmer et al.
patent: 11-163276 (1999-06-01), None
patent: 2001-77111 (2001-03-01), None
patent: 2001-274378 (2001-10-01), None
patent: 2002-359370 (2002-12-01), None
patent: 2003-8011 (2003-01-01), None
patent: 2003-23005 (2003-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having high dielectric constant gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having high dielectric constant gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having high dielectric constant gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3769909