Semiconductor device having heat dissipation layer

Details Semiconductor device having heat dissipation layer Semiconductor device having heat dissipation layer

2006-05-09

2006-05-09

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S701000, C257S702000, C257S703000, C257S706000, C257S707000, C257S717000, C257S796000

Reexamination Certificate

active

07042081

ABSTRACT:
A semiconductor device includes a semiconductor constructing body which has a semiconductor substrate, a plurality of external connection electrodes formed on the semiconductor substrate, and heat dissipation columnar electrodes. Upper interconnections are mounted on one side of the semiconductor constructing body and connected to the external connection electrodes of the semiconductor constructing body. A heat dissipation layer is mounted on one side of the semiconductor constructing body and made of the same material as that of the upper interconnections.

REFERENCES:
patent: 5097318 (1992-03-01), Tanaka et al.
patent: 6770971 (2004-08-01), Kouno et al.
patent: 2002/0030276 (2002-03-01), Lu et al.
patent: 2005/0098891 (2005-05-01), Wakabayashi et al.
patent: 2001-326299 (2001-11-01), None

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