Semiconductor device having guard ring and manufacturing...

Details Semiconductor device having guard ring and manufacturing... Semiconductor device having guard ring and manufacturing...

2006-09-25

2008-08-12

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S758000, C257SE23002, C257SE29013, C438S140000

Reexamination Certificate

active

07411257

ABSTRACT:
An interlayer insulation film is etched to form contact holes in an integrated circuit part. At this time, a trench is not formed in a guard ring part. Subsequently, ion implantation is carried out in source/drain regions in a peripheral circuit part for contact compensation, and high-temperature annealing is carried out in order to activate implanted impurities. Subsequently, an interlayer insulation film, a storage capacitor, and another interlayer insulation film are formed in sequence. Then, contact holes reaching a part of wiring layers are formed in the peripheral circuit part while, in the guard ring part, a trench reaching a diffusion layer is formed. Next, a barrier metal film is formed in each of the contact holes and the trench, and further, a contact plug comprising, for example, a W film is buried therein.

REFERENCES:
patent: 5196910 (1993-03-01), Moriuchi et al.
patent: 5652459 (1997-07-01), Chen
patent: 6060784 (2000-05-01), Oda
patent: 6498089 (2002-12-01), Komada
patent: 6525398 (2003-02-01), Kim et al.
patent: 6683329 (2004-01-01), Moriya
patent: 2003/0193090 (2003-10-01), Otani et al.
patent: 2002017589 (2002-03-01), None
patent: 2002-134506 (2002-05-01), None
Office Action from the Japanese Patent Office dated May 1, 2007 in the corresponding Japanese Patent Application No. 2002-255332.

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