Semiconductor device having group III nitride compound and enabl

Details Semiconductor device having group III nitride compound and enabl Semiconductor device having group III nitride compound and enabl

1995-08-31

1997-07-22

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 89, 257 90, 257101, 257102, 257103, H01L 3300

Patent

active

056506414

ABSTRACT:
A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.

REFERENCES:
patent: 5274251 (1993-12-01), Ota et al.
patent: 5406093 (1995-04-01), Endo et al.

Affiliated with

Also associated with

Rating

Semiconductor device having group III nitride compound and enabl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having group III nitride compound and enabl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having group III nitride compound and enabl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1561551