Semiconductor device having gate oxide formed by selective oxide

Details Semiconductor device having gate oxide formed by selective oxide Semiconductor device having gate oxide formed by selective oxide

1997-03-26

2000-10-10

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438703, 438769, 438770, 438774, H01L 21316

Patent

active

061301647

ABSTRACT:
A semiconductor device having a gate oxide layer formed by selective removal of the gate oxide layer and a process for manufacturing such a device is disclosed. A gate oxide layer is formed on a substrate. The gate oxide layer is selectively removed in a controlled ambient to reduce the thickness of the gate oxide layer. A gate electrode is disposed on the gate oxide layer. In accordance with one particular aspect of the process, the controlled ambient includes an NF.sub.3 bearing gas, which is flowed over the gate oxide layer to remove portions of the oxide layer.

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