Semiconductor device having fuse and capacitor at the same...

Details Semiconductor device having fuse and capacitor at the same... Semiconductor device having fuse and capacitor at the same...

2007-07-03

2007-07-03

Malsawma, Lex (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE23149

Reexamination Certificate

active

10946343

ABSTRACT:
In a semiconductor device and a method of fabricating the same, a fuse and a capacitor are formed at a same level on a semiconductor substrate having a fuse area and a capacitor area. The fuse is placed on the fuse area, and a lower plate is placed on the capacitor area. The lower plate is located on a same plane as the fuse. Further, an upper plate is located above the lower plate, and a capping layer is interposed between the lower plate and the upper plate. Therefore, the fuse and the capacitor can be formed at the same time, thereby minimizing photolithography and etch process steps.

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