Semiconductor device having fully and partially depleted SOI...

Details Semiconductor device having fully and partially depleted SOI... Semiconductor device having fully and partially depleted SOI...

2006-02-28

2006-02-28

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S350000, C257S351000

Reexamination Certificate

active

07005706

ABSTRACT:
A semiconductor device includes a silicon layer on an insulating layer. The silicon layer has a first area and a second area. An FD-MOSFET is formed in the first area and a PD-MOSFET is formed in the second area. The semiconductor device satisfies the following formulas: the thickness of the silicon layer is 28 nm to 42 nm, the impurity concentration Df cm−3of the first area is Df≦9.29*1015*(62.46−ts) and Df≦2.64*1015*(128.35−ts), and the impurity concentration Dp of the second area is Dp≦9.29*1015*(62.46−ts) and Dp≦2.64*1015*(129.78−ts).

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