Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-31
1997-12-30
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257401, H01L 2976, H01L 2994, H01L 31062
Patent
active
057033900
ABSTRACT:
A semiconductor device including first, second, third and fourth MOSFETs constituting an H bridge circuit. Each of the first and second MOSFETs is a vertical DMOSFET and each of the third and fourth MOSFETs is a lateral DMOSFET having a surface diffusion region formed in a portion of a drain region. The surface diffusion region has a conductivity type opposite that of a source region of the lateral DMOSFET and is electrically connected to the source region. Each of the surface diffusion regions may be made of a part of a channel stop region formed under a field insulator film. Each of the third and fourth MOSFETs may be a lateral DMOSFET having no surface diffusion region. Low on-resistance and small chip size of the device are obtained.
Fahmy Wael
NEC Corporation
LandOfFree
Semiconductor device having four power MOSFETs constituting H br does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having four power MOSFETs constituting H br, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having four power MOSFETs constituting H br will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-205143