Semiconductor device having flip chip bonding pads matched with

Details Semiconductor device having flip chip bonding pads matched with Semiconductor device having flip chip bonding pads matched with

1992-12-11

1993-10-12

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257459, 257461, H01L 29161, H01L 29205, H01L 29225, H01L 3300

Patent

active

052528529

ABSTRACT:
As semiconductor device includes a substrate and first and second semiconductor light receiving elements which are spaced apart and monolithically integrated on the substrate. The light receiving elements each has first and second terminals. A first flip-chip bonding pad is formed on the surface of the device and the device includes a first conductor element which electrically interconnects the first terminals of the elements in series and includes a centrally disposed portion that is electrically connected to the first flip-chip bonding pad. Second and third flip-chip bonding pads are also formed on a surface of the device and elongated electrodes are provided for electrically interconnecting the second terminal of the first light receiving element with the second flip-chip bonding pad and the second terminal of the second light receiving element with the third flip-chip bonding pad. The elongated electrodes have essentially the same length so as to stabilize the optical and electrical balance characteristics of the device and provide a satisfactory dual balance optical receiver.

REFERENCES:
patent: 4034399 (1977-07-01), Drukler et al.
patent: 4857746 (1989-08-01), Kuhlmann et al.
patent: 4912545 (1990-03-01), Go
Electronic Letters vol. 24 No. 23, Nov. 10, 1988, ENAGE GB pp. 1457-1458; S. Chandrasekhar et al.; "Balanced dual photodiodes integrated with a 3dB directional coupler for coherent lightwave receiver".
Electronics Letters, vol. 22, No. 8, Apr. 10, 1986, ENAGE GB pp. 413-415; B. L. Kasper et al.: "Balanced dual-detector receiver for optical heterodyne communication at Gbit/s rates" *the whole document*.
Electronics Letters, vol. 24, No. 2, Jan. 21, 1988, ENAGE GB pp. 109-110; M. Makiuchi et al.: "Small-junction-area GaInAs/InP pin photodiode with a monolithic microlens" *the whole document*.
Electronic Letters, vol. 21, No. 14, Jul. 1985, ENAGE GB pp. 593-595; R. S. Sussmann et al.: "Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodector for long-wavelength high-data-rate fibre-optical systems" *the whole document*.
Electronic Letters, vol. 24, No. 9, Apr. 28, 1988, ENAGE GB pp. 514.516; O. Wada et al.: "Fabrication of monolithic twin-GaInAs pin photodiode for balanced dual-detector optical coherent receivers" *the whole document*.
ECOC 87 Technical Digest, vol. I, Aug. 1988, CPEF c/o Samoinsinoorilitto R. Y. pp. 39-42; K. Matsuda et al.: "A monolithically integrated InGaAs/InP photoreceiver operating with a single 5V power supply" *FIG. 1*.

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