Semiconductor device having fins FET and manufacturing...

Details Semiconductor device having fins FET and manufacturing... Semiconductor device having fins FET and manufacturing...

2008-01-10

2010-10-26

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S197000, C438S770000, C438S311000, C257SE21170, C257SE21320, C257SE21051, C257SE21058, C257SE21077, C257SE21218, C257SE21277, C257SE21229, C257SE21267, C257SE21304, C257SE21319, C257SE21421

Reexamination Certificate

active

07820551

ABSTRACT:
A line-form insulator is formed on a substrate and then the substrate is etched with the insulator used as a mask to form first trenches on both sides of the insulator. Side wall insulators are formed on the side walls of the first trenches, the substrate is etched with the insulator and side wall insulators used as a mask to form second trenches in the bottom of the first trenches. After, the substrate is oxidized with the insulator and side wall insulators used as an anti-oxidation mask to cause oxide regions formed on the adjacent side walls of the second trenches lying on both sides of the substrate to make contact with each other and the insulator and side wall insulators are removed. Then, a fin FET having a semiconductor region as a line-form fin is formed in the substrate.

REFERENCES:
patent: 7326619 (2008-02-01), Park et al.
patent: 7393733 (2008-07-01), Currie
patent: 7488650 (2009-02-01), Schulz
patent: 2006/0275988 (2006-12-01), Yagishita et al.
patent: 2005-229107 (2005-08-01), None

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