Semiconductor device having field effect transistor using ferroe

Details Semiconductor device having field effect transistor using ferroe Semiconductor device having field effect transistor using ferroe

1992-12-01

1994-04-26

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257 77, 257411, 257751, G11C 1122

Patent

active

053073053

ABSTRACT:
A semiconductor device having a field effect transistor in which a silicon carbide layer and a ferroelectric film are stacked in this order on the surface of a silicon substrate and the ferroelectric film is used as a gate insulation film. A channel between a source and a drain is formed in the silicon carbide layer. A metal or oxygen contained in a ferroelectric material is difficult to diffuse in silicon carbide. Therefore, the silicon carbide layer is not eroded in the case of heat treatment after forming the ferroelectric film. Therefore, good FET characteristics is obtained.

REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
patent: 5103285 (1992-04-01), Furumura et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5231297 (1993-07-01), Nakayama et al.
Matsui et al., "PbTiO.sub.3 Thin Film Gate Nonvolatile Memory FET", 1979, 1979 Proceedings of the 2nd Meeting on Ferroelectric Materials and Their Applications F-8, pp. 239-244.
Higumi et al., "MFS"-A New Type of Nonvolatile Memory Switch Using PLZT Film, Proceedings of the 9th Conference on Solid State Devices, Tokyo, 1977; Japanese Journal of Applied Physics, vol. 17 (1978) Supplement 17-1, pp. 209-214.

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