Semiconductor device having enhanced performance and method

Details Semiconductor device having enhanced performance and method Semiconductor device having enhanced performance and method

2008-07-08

2008-07-08

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S365000, C257SE29027

Reexamination Certificate

active

07397084

ABSTRACT:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.

REFERENCES:
patent: 6197640 (2001-03-01), Davies
patent: 6215152 (2001-04-01), Hebert
patent: 2003/0205829 (2003-11-01), Boden, Jr.
patent: 2004/0007766 (2004-01-01), Nakayama et al.
patent: 2004/0031981 (2004-02-01), Grivna
patent: 2004/0079991 (2004-04-01), Lin et al.

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