Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1990-12-27
1992-11-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257554, 257556, H01L 2972
Patent
active
051631784
ABSTRACT:
A semiconductor device comprises a semiconductor substrate provided with a collector region a base region and an emitter region in a lateral arrangement. Respective portions having peak impurity concentrations of the collector region and the emitter region are formed within the semiconductor substrate. A method of fabricating a semiconductor device comprises a step of forming a collector region of a second conduction type and an emitter region of a second conduction type in a lateral arrangement in a semiconductor substrate serving as a base region of a first conduction type by using a first mask provided with a pair of openings, and a step of forming heavily doped regions of the second conduction type so as to be connected respectively to the collector region and the emitter region by using a second mask provided with a pair of openings separated from each other by a distance greater than the distance between the openings of the first mask.
REFERENCES:
patent: 4005452 (1977-01-01), Martinelli et al.
A. S. Grove, Physics and Technology of Semconductor Devices, John Wiley & Sons, New York (1967) pp. 78-83.
Anmo Hiroaki
Chuchi Norikazu
Gomi Takayuki
Kayanuma Akio
Kobayashi Koji
Carroll J.
Sony Corporation
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