Semiconductor device having enhanced breakdown voltage

Details Semiconductor device having enhanced breakdown voltage Semiconductor device having enhanced breakdown voltage

2006-09-12

2006-09-12

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185270, C257S409000, C257S487000

Reexamination Certificate

active

07106628

ABSTRACT:
A semiconductor device has: a main circuit including a plurality of MOS transistors operating at a first voltage; a memory requiring an operation at a second voltage higher than the first voltage; and a drive circuit for driving the memory, the drive circuit comprising one well, two or more MOS transistors in a cascade connection formed in the well, and well contact or contacts formed between MOS transistors in the well and on both outer sides of the cascade connection, or formed only between MOS transistors, or formed on both outer sides of the cascade connection, or formed only outside a drain of MOS transistors in the cascade connection. The semiconductor device is provided which integrates a memory requiring a high voltage, can simplify manufacture processes for a memory drive circuit and suppress an increase in an occupation area in chip of the memory drive circuit.

REFERENCES:
patent: 5862082 (1999-01-01), Dejenfelt et al.
patent: 5959344 (1999-09-01), Mamontov et al.
patent: 6924782 (2005-08-01), Fujioka et al.
patent: 2002/0117714 (2002-08-01), Hebert
patent: 11-133925 (1999-05-01), None
patent: 11-133926 (1999-05-01), None
patent: 2000-323584 (2000-11-01), None

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