Semiconductor device having element isolation region

Details Semiconductor device having element isolation region Semiconductor device having element isolation region

2011-06-14

2011-06-14

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21676, C438S208000, C438S203000

Reexamination Certificate

active

07960796

ABSTRACT:
An n-type buried diffusion layer is formed on the surface layer of the prescribed area of a p-type silicon substrate, and a p-type first high-concentration isolation diffusion layer is formed in the silicon substrate so as to surround the buried diffusion layer. An n-type epitaxial layer is formed on the silicon substrate, the buried diffusion layer, and the first high-concentration isolation diffusion layer. A p-type second high-concentration isolation diffusion layer is formed in the epitaxial layer on the first high-concentration isolation diffusion layer. A p-type low-concentration isolation diffusion layer for isolating the epitaxial layer into a plurality of island regions is formed in the epitaxial layer on the second high-concentration isolation diffusion layer.

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