Semiconductor device having element isolation

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257349, 257394, H01L 2701, H01L 310392

Patent

active

060607513

ABSTRACT:
A semiconductor device comprises a composite substrate comprising a semiconductor substrate and a semiconductor layer on said semiconductor substrate with a dielectric layer interposed therebetween; a plurality of element regions formed in the semiconductor layer and each having formed a field effect transistor including a source region and a drain region of a first conduction type; and an impurity-diffused region of a second conduction type which is formed directly under an element isolating film isolating respective elements. The impurity-diffused region having the opposite conduction type and formed under the element separating film restrain formation of parasitic transistors and prevent a decrease in threshold value.
The semiconductor device can be fabricated by preparing a SOI substrate; making a mask on the composite substrate and having an aperture on a location to be used for isolating elements; using the mask to form both an element isolating insulation film and first conduction type impurity-diffused regions in locations corresponding to outer marginal portions of elements to be made; and forming second conduction type impurity-diffused regions on the semiconductor layer as sources of drains of the elements.

REFERENCES:
patent: 5294821 (1994-03-01), Iwamatsu
patent: 5359219 (1994-10-01), Hwang

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