Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-05-23
2006-05-23
Lee, Eddie (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S193000, C438S259000, C438S270000, C438S510000
Reexamination Certificate
active
07049185
ABSTRACT:
In a semiconductor device including active areas where transistors are formed and a field area for isolating the active areas from each other, the field area has a plurality of dummy areas where dummy gates are formed.
REFERENCES:
patent: 4866494 (1989-09-01), Kurosawa
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5885856 (1999-03-01), Gilbert et al.
patent: 5923969 (1999-07-01), Oyamatsu
patent: 6010939 (2000-01-01), Bothra
patent: 6140687 (2000-10-01), Shimomura et al.
patent: 6153476 (2000-11-01), Inaba et al.
patent: 6225230 (2001-05-01), Nitta et al.
patent: 6232161 (2001-05-01), Chen et al.
patent: 6312997 (2001-11-01), Tran
patent: 6327695 (2001-12-01), Bothra et al.
patent: 6346736 (2002-02-01), Ukeda et al.
patent: 9-115905 (1997-05-01), None
patent: 09-181159 (1997-11-01), None
patent: 10-200109 (1998-07-01), None
patent: 10-092921 (1998-10-01), None
patent: 11-87657 (1999-03-01), None
patent: 11-214634 (1999-08-01), None
Gebremariam Samuel Admassu
Hayes & Soloway P.C.
Lee Eddie
NEC Electronics Corporation
LandOfFree
Semiconductor device having dummy gates and its... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having dummy gates and its..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having dummy gates and its... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3565029