Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-20
2007-02-20
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S307000, C257S308000, C257S309000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
11047817
ABSTRACT:
Semiconductor devices having a dual stacked MIM capacitor and methods of fabricating the same are disclosed. The semiconductor device includes a dual stacked MIM capacitor formed on the semiconductor substrate. The dual stacked MIM capacitor includes a lower plate positioned, an upper plate electrically connected to the lower plate and positioned above the lower plate, and an intermediate plate interposed between the lower plate and the upper plate. An upper interconnection line is positioned at the same level as the upper plate. The upper interconnection line is electrically connected to the intermediate plate. As a result, the upper plate may be formed by a damascene process.
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Soward Ida M.
Volentine & Whitt PLLC
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