Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2009-01-26
2010-11-23
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S351000, C257S371000, C257S388000, C257S412000, C257SE27062
Reexamination Certificate
active
07838908
ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a PFET formed on the substrate, the PFET includes a SiGe layer disposed on the substrate, a high-K dielectric layer disposed on the SiGe layer, a first metallic layer disposed on the high-k dielectric layer, a first intermediate layer disposed on the first metallic layer, a second metallic layer disposed on the first intermediate layer, a second intermediate layer disposed on the second metallic layer, and a third metallic layer disposed on the second intermediate layer; an NFET formed on the substrate, the NFET includes the high-k dielectric layer, the high-k dielectric layer being disposed on the substrate, the second intermediate layer, the second intermediate layer being disposed on the high-k dielectric layer, and the third metallic layer, the third metallic layer being disposed on the second intermediate layer. Alternatively, the first metallic layer is omitted. A method to fabricate the device includes providing SiO2and alpha-silicon layers or a dBARC layer.
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Ando Takashi
Chudzik Michael P.
Frank Martin M.
Henson William K.
Hon Wong Keith Kwong
Abate Joseph P.
International Business Machines - Corporation
Louie Wai-Sing
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