Semiconductor device having doped gate electrode

Details Semiconductor device having doped gate electrode Semiconductor device having doped gate electrode

2005-07-05

2005-07-05

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06914311

ABSTRACT:
The claimed invention relates to a semiconductor device and a method of fabricating the semiconductor device. More particularly, the claimed invention relates to a method of fabricating the semiconductor device in which parts of a gate electrode at the ends of a channel are lightly doped compared to the center part of the gate electrode, thereby eliminating a hump on a subthreshold current slope. To achieve the objects of the claimed invention, there is provided a semiconductor device that includes a semiconductor substrate divided into an isolation region and an active region. A gate oxide film is formed on a first upper surface of the active region. A gate electrode is formed on a second upper surface of the gate oxide film, the gate electrode having a first part and a second part. The first part is more lightly doped with impurities than the second part. A channel is formed in an upper end of the active region proximate the gate electrode. A source and a drain are formed in the active region on opposite sides of the gate electrode.

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