Semiconductor device having DMOS and CMOS on single substrate

Details Semiconductor device having DMOS and CMOS on single substrate Semiconductor device having DMOS and CMOS on single substrate

2007-07-10

2007-07-10

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S351000, C257S357000, C257S371000

Reexamination Certificate

active

10769817

ABSTRACT:
A semiconductor device includes a P-type semiconductor substrate, a P-channel DMOS transistor, a CMOS transistor. The P-channel DMOS transistor is disposed on the P-type semiconductor substrate and includes a drain formed of the P-type semiconductor substrate and a source formed in the P-type semiconductor substrate on a main surface of the P-type semiconductor substrate. The CMOS transistor is disposed on the P-type semiconductor substrate and includes a P-channel MOS transistor and an N-channel MOS transistor. The P-channel MOS transistor is formed in an N-type region formed in the P-type semiconductor substrate on the main surface of the P-type semiconductor substrate. The N-channel MOS transistor is formed in a P-type region formed in the P-type semiconductor substrate on the main surface of the P-type semiconductor substrate. The P-type region is electrically isolated from the P-type semiconductor substrate by the N-type region.

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