Electronic digital logic circuitry – Insulated gate charge transfer device
Reexamination Certificate
2008-09-04
2011-12-06
Crawford, Jason M (Department: 2819)
Electronic digital logic circuitry
Insulated gate charge transfer device
C326S118000, C327S480000
Reexamination Certificate
active
08072241
ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.
REFERENCES:
patent: 5306937 (1994-04-01), Nishimura
patent: 5325258 (1994-06-01), Choi et al.
patent: 5375029 (1994-12-01), Fukunaga et al.
patent: 5396117 (1995-03-01), Housen et al.
patent: 5432471 (1995-07-01), Majumdar et al.
patent: 5444591 (1995-08-01), Chokhawala et al.
patent: 5559656 (1996-09-01), Chokhawala
patent: 5619047 (1997-04-01), Bauer
patent: 5619074 (1997-04-01), Berch et al.
patent: 5702961 (1997-12-01), Park
patent: 5710508 (1998-01-01), Watanabe
patent: 5828112 (1998-10-01), Yamaguchi
patent: 6215289 (2001-04-01), Simonnet
patent: 6215634 (2001-04-01), Terasawa
patent: 6594131 (2003-07-01), Umekawa
patent: 6717785 (2004-04-01), Fukuda et al.
patent: 6829152 (2004-12-01), Miura et al.
patent: 6842064 (2005-01-01), Yamamoto
patent: 6867454 (2005-03-01), Hattori
patent: 7414867 (2008-08-01), Hussein et al.
patent: 2001/0026429 (2001-10-01), Fukuda et al.
patent: 2005/0017290 (2005-01-01), Takahashi et al.
patent: 2005/0258493 (2005-11-01), Aono et al.
patent: 2006/0055056 (2006-03-01), Miura et al.
patent: 2008/0258172 (2008-10-01), Takahashi et al.
patent: 2009/0057832 (2009-03-01), Kouno
patent: 2009/0114947 (2009-05-01), Fukuda et al.
patent: 2010/0090248 (2010-04-01), Kouno
patent: 2010/0156506 (2010-06-01), Tsuzuki et al.
patent: 2010/0187567 (2010-07-01), Tanabe et al.
patent: 10201378 (2003-07-01), None
patent: A-H2-202375 (1990-08-01), None
patent: A-H2-309676 (1990-12-01), None
patent: A-H3-190566 (1991-08-01), None
patent: A-H7-94730 (1995-04-01), None
patent: A-H10-32976 (1998-02-01), None
patent: A-H11-54747 (1999-02-01), None
patent: A-2000-200906 (2000-07-01), None
patent: A-2002-185295 (2002-06-01), None
patent: A-2004-88001 (2004-03-01), None
patent: A-2004-180386 (2004-06-01), None
patent: A-2004-208407 (2004-07-01), None
patent: A-2007-71796 (2007-03-01), None
patent: A-2007-194660 (2007-08-01), None
patent: A-2007-287988 (2007-11-01), None
patent: A-2008-53648 (2008-03-01), None
patent: A-2008-72848 (2008-03-01), None
R. Natarajan, et al., “An 800V Integrated DMOS-IGBT/PiN or MPS-Rectifier Power Device,” ICs, Kitakyushu, (2004), pp. 261-264.
H. Takahashi et al., “RC-IGBT for Motor Control,” vol. 81, No. 5 (2007). (English Abstract enclosed).
Office Action mailed Feb. 28, 2011 issued in corresponding CN application No. 200810212562.7 (English translation enclosed).
Office Action mailed on Jul. 12, 2011 in the corresponding Japanese patent application No. 2008-226982 (English translation enclosed).
Notice of Reason for Refusal mailed Aug. 2, 2011 in corresponding JP application No. 2008-228356 (and English translation).
Second Office Action mailed Aug. 31, 2011 in corresponding Chinese application No. 200810212562.7 (with English translation).
Crawford Jason M
DENSO CORPORATION
Posz Law Group , PLC
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