Semiconductor device having diode and IGBT

Details Semiconductor device having diode and IGBT Semiconductor device having diode and IGBT

2008-08-12

2010-06-01

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S476000, C257SE29197

Reexamination Certificate

active

07728382

ABSTRACT:
A semiconductor device includes: a semiconductor substrate including a first conductive type layer; a plurality of IGBT regions, each of which provides an IGBT element; and a plurality of diode regions, each of which provides a diode element. The plurality of IGBT regions and the plurality of diode regions are alternately arranged in the substrate. Each diode region includes a Schottky contact region having a second conductive type. The Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer. The Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region.

REFERENCES:
patent: 5969400 (1999-10-01), Shinohe et al.
patent: 6707128 (2004-03-01), Moriguchi et al.
patent: 7572683 (2009-08-01), Takei et al.
patent: 2007/0108468 (2007-05-01), Takahashi
patent: 2007/0200138 (2007-08-01), Ozeki et al.
patent: A-6-196705 (1994-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having diode and IGBT does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having diode and IGBT, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having diode and IGBT will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4245330