Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-09-23
1999-11-30
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059947411
ABSTRACT:
First and second well regions of N conductivity type are formed in a P-type semiconductor substrate. A digital circuit is formed in the first well region. An analog circuit is formed in the second well region. A power source wiring for supplying a bias potential is connected to the substrate. The power source wiring is connected to a power source terminal which is different from the power source terminal of the digital circuit.
REFERENCES:
patent: 4595909 (1986-06-01), Jarrett
Koizumi Masayuki
Miyata Haruyuki
Kabushiki Kaisha Toshiba
Meier Stephen D.
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