Semiconductor device having diffusion-preventing layer between I

Details Semiconductor device having diffusion-preventing layer between I Semiconductor device having diffusion-preventing layer between I

1992-12-17

1994-08-23

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257200, 257616, H01L 2120

Patent

active

053410068

ABSTRACT:
A semiconductor device which comprises: a triple-layered structure consisting of a first single-crystalline layer of a group-III--V compound semiconductor, a second single-crystalline layer of a group-IV element semiconductor, and a third single-crystalline layer of an element semiconductor interposed between the first and second layers in a manner such that coherent bond between crystal lattices is established at both interfaces between the first and third layers and between the third and second layers, the third layer preventing component elements of the first and second layers from mutually diffusing from one to the other of the first and second layers. A process according to the present invention ensures a coherent bond between crystal lattices by using an epitaxial growth.

REFERENCES:
patent: 5091333 (1992-02-01), Fan et al.
patent: 5168330 (1992-12-01), Vitkavage et al.

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