Semiconductor device having different metal gate structures

Details Semiconductor device having different metal gate structures Semiconductor device having different metal gate structures

2011-05-31

2011-05-31

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S204000, C257S368000, C257S369000, C257SE27064, C257SE27067

Reexamination Certificate

active

07952118

ABSTRACT:
A semiconductor includes a channel region in a semiconductor substrate, a gate dielectric film on the channel region, and a gate on the gate dielectric film. The gate includes a doped metal nitride film, formed from a nitride of a first metal and doped with a second metal which is different from the first metal, and a conductive polysilicon layer formed on the doped metal nitride film. The gate may further include a metal containing capping layer interposed between the doped metal nitride film and the conductive polysilicon layer.

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