Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2007-07-03
2007-07-03
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S783000, C257SE23040
Reexamination Certificate
active
11440068
ABSTRACT:
A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
REFERENCES:
patent: 6141385 (2000-10-01), Yamaji
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6432767 (2002-08-01), Torii et al.
patent: 6583512 (2003-06-01), Nakaoka et al.
Cross Jeffrey Scott
Gruverman Alexei
Horii Yoshimasa
Kingon Angus
Tsukada Mineharu
Fujitsu Limited
Pham Hoai
Westerman, Hattori, Daniels & Adrian , LLP.
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