Semiconductor device having deep trench charge compensation...

Details Semiconductor device having deep trench charge compensation... Semiconductor device having deep trench charge compensation...

2011-03-08

2011-03-08

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S133000, C257S139000, C257S140000, C257S146000, C257S147000, C257S162000, C257S342000, C257S900000, C257SE29013, C257SE29174, C257SE29243, C257SE29260

Reexamination Certificate

active

07902601

ABSTRACT:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.

REFERENCES:
patent: 5571738 (1996-11-01), Krivokapic
patent: 6576516 (2003-06-01), Blanchard
patent: 7019360 (2006-03-01), Blanchard et al.
patent: 2004/0206989 (2004-10-01), Aida et al.

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