Semiconductor device having contact hole open to impurity region

Details Semiconductor device having contact hole open to impurity region Semiconductor device having contact hole open to impurity region

1996-02-20

1998-09-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257383, 257384, 257389, 257395, 257397, 257412, 257413, 438294, 438296, H01L 2976, H01L 2994, H01L 30062, H01L 31113

Patent

active

058048626

ABSTRACT:
A MIS type field effect transistor has a source/drain region overlain by a titanium silicide layer contiguous to an upper silicon nitride layer of a buried isolating structure embedded into a silicon substrate, and a contact hole is formed in an inter-level insulating layer of silicon oxide exposing a part of the upper silicon nitride layer and a part of the titanium silicide layer into the contact hole; while the inter-level insulating layer is being selectively etched so as to form the contact hole, the upper silicon nitride layer serves as an etching stopper, and the contact hole never reaches the silicon substrate beneath the buried isolating structure.

REFERENCES:
patent: 5399890 (1995-03-01), Okada et al.
patent: 5428240 (1995-06-01), Lur
patent: 5479041 (1995-12-01), Lur et al.

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