Semiconductor device having conductive structures formed...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Reexamination Certificate

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06917068

ABSTRACT:
A semiconductor device is provided by forming a gate electrode and a dielectric layer below and adjacent the side surfaces of the gate electrode. Relatively thin conductive structures are formed within the dielectric layer. The conductive structures may be used as a floating gate electrode for a memory device. The conductive structures may also be used to control a threshold voltage for a logic device.

REFERENCES:
patent: 5789269 (1998-08-01), Mehta et al.
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 6121654 (2000-09-01), Likharev
patent: 6703298 (2004-03-01), Roizin et al.
The American Heritage Dictionary, 2000.
Peter Van Zant, Microchip Fabrication, McGraw-Hill, Fourth Edition, p. 529.
Zoran Krivokapic, U.S. Appl. No. 10/211,317 for “Non-Volatile Memory Device” filed Aug. 5, 2002.

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